Formation mechanisms of Cu(In,Ga)Se2 solar cells prepared from electrodeposited precursors
Identifieur interne : 000C72 ( Main/Repository ); précédent : 000C71; suivant : 000C73Formation mechanisms of Cu(In,Ga)Se2 solar cells prepared from electrodeposited precursors
Auteurs : RBID : Pascal:13-0229249Descripteurs français
- Pascal (Inist)
- Mécanisme formation, Cellule solaire, Revêtement électrodéposé, Dépôt électrolytique, Précurseur, Recuit thermique, Indium, Composé du gallium, Dépôt pulvérisation, Température recuit, Sélénium, Couche mince, Traitement thermique rapide, Traitement thermique, Cuivre, Gallium, Verre sodocalcique, Séléniure de cuivre, Séléniure de gallium, Fluorescence RX, Spectrométrie RX, Diffraction RX, Spectrométrie Raman, Composition phase, Microscopie électronique balayage, Analyse structurale, Décharge luminescente, Diffusion(transport), Composé ternaire, Chalcopyrite, Cuivre Indium Séléniure Mixte, In, Substrat Molybdène, CuGaSe2, CuInSe2, 8460J, 8115P, 8115C, 6855N.
- Wicri :
- concept : Cuivre.
English descriptors
- KwdEn :
- Annealing temperature, Chalcopyrite, Copper, Copper Indium Selenides Mixed, Copper selenides, Diffusion, Electrodeposited coatings, Electrodeposition, Formation mechanism, Gallium, Gallium compound, Gallium selenides, Glow discharge, Heat treatment, Indium, Phase composition, Precursor, Raman spectrometry, Rapid thermal processing, Scanning electron microscopy, Selenium, Soda-lime glasses, Solar cell, Sputter deposition, Structural analysis, Ternary compound, Thermal annealing, Thin film, X ray diffraction, X ray fluorescence, X ray spectrometry.
Abstract
The development of low cost industrial processes is one of the key issues to make Cu(In,Ga)Se2 based solar cells reach grid-parity. Such a process is found by using a two-step technology based on the sequential electrodeposition of a metallic precursor followed by a rapid annealing. Three types of metallic precursors (two-compound systems as copper-indium, copper-gallium and three-compound system as copper-indium- gallium) have been electrodeposited on a molybdenum sputtered soda lime glass and alloyed through a low annealing temperature. Then a selenium film has been evaporated and the stack has been annealed at high temperature in a rapid thermal processing furnace. A one-step heating profile has been used from room temperature to 550 °C in less than 1 min. Samples for which the heating was stopped after different annealing times have been characterized using several techniques: X-ray fluorescence spectrometry for elemental composition, X-ray diffraction and Raman spectroscopy for phase composition, scanning electron microscopy for structural analysis and glow discharge optical emission spectroscopy for diffusion study. Preferential formation reactions of the two-compound based metallic precursors have been studied and compared with the copper-indium- gallium metallic precursor used in a two step process. A gallium free system reacts faster than a gallium-based system and presents well-formed ternary compound after a standard selenization. However, the incorporation of gallium can be improved through a longer annealing time or a higher annealing temperature.
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Oliva</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Nexcis Photovoltaic Technology, 190 Avenue Célestin Coq</s1><s2>13106 Rousset</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Rousset</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Ecole Nationale Supérieure des Mines, CMP-EMSE, MOC, 880 Avenue de Mimet</s1><s2>13541 Gardanne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Gardanne</settlement></placeName></affiliation></author><author><name sortKey="Broussillou, C" uniqKey="Broussillou C">C. Broussillou</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Nexcis Photovoltaic Technology, 190 Avenue Célestin Coq</s1><s2>13106 Rousset</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Rousset</settlement></placeName></affiliation></author><author><name sortKey="Annibaliano, M" uniqKey="Annibaliano M">M. 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Frederich</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Nexcis Photovoltaic Technology, 190 Avenue Célestin Coq</s1><s2>13106 Rousset</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Rousset</settlement></placeName></affiliation></author><author><name sortKey="Grand, P P" uniqKey="Grand P">P. P. Grand</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Nexcis Photovoltaic Technology, 190 Avenue Célestin Coq</s1><s2>13106 Rousset</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Rousset</settlement></placeName></affiliation></author><author><name sortKey="Roussy, A" uniqKey="Roussy A">A. Roussy</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Ecole Nationale Supérieure des Mines, CMP-EMSE, MOC, 880 Avenue de Mimet</s1><s2>13541 Gardanne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Gardanne</settlement></placeName></affiliation></author><author><name sortKey="Collot, P" uniqKey="Collot P">P. Collot</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Ecole Nationale Supérieure des Mines, CMP-EMSE, MOC, 880 Avenue de Mimet</s1><s2>13541 Gardanne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Gardanne</settlement></placeName></affiliation></author><author><name sortKey="Bodnar, S" uniqKey="Bodnar S">S. Bodnar</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Nexcis Photovoltaic Technology, 190 Avenue Célestin Coq</s1><s2>13106 Rousset</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Rousset</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0229249</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0229249 INIST</idno><idno type="RBID">Pascal:13-0229249</idno><idno type="wicri:Area/Main/Corpus">000B06</idno><idno type="wicri:Area/Main/Repository">000C72</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing temperature</term><term>Chalcopyrite</term><term>Copper</term><term>Copper Indium Selenides Mixed</term><term>Copper selenides</term><term>Diffusion</term><term>Electrodeposited coatings</term><term>Electrodeposition</term><term>Formation mechanism</term><term>Gallium</term><term>Gallium compound</term><term>Gallium selenides</term><term>Glow discharge</term><term>Heat treatment</term><term>Indium</term><term>Phase composition</term><term>Precursor</term><term>Raman spectrometry</term><term>Rapid thermal processing</term><term>Scanning electron microscopy</term><term>Selenium</term><term>Soda-lime glasses</term><term>Solar cell</term><term>Sputter deposition</term><term>Structural analysis</term><term>Ternary compound</term><term>Thermal annealing</term><term>Thin film</term><term>X ray diffraction</term><term>X ray fluorescence</term><term>X ray spectrometry</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Mécanisme formation</term><term>Cellule solaire</term><term>Revêtement électrodéposé</term><term>Dépôt électrolytique</term><term>Précurseur</term><term>Recuit thermique</term><term>Indium</term><term>Composé du gallium</term><term>Dépôt pulvérisation</term><term>Température recuit</term><term>Sélénium</term><term>Couche mince</term><term>Traitement thermique rapide</term><term>Traitement thermique</term><term>Cuivre</term><term>Gallium</term><term>Verre sodocalcique</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Fluorescence RX</term><term>Spectrométrie RX</term><term>Diffraction RX</term><term>Spectrométrie Raman</term><term>Composition phase</term><term>Microscopie électronique balayage</term><term>Analyse structurale</term><term>Décharge luminescente</term><term>Diffusion(transport)</term><term>Composé ternaire</term><term>Chalcopyrite</term><term>Cuivre Indium Séléniure Mixte</term><term>In</term><term>Substrat Molybdène</term><term>CuGaSe2</term><term>CuInSe2</term><term>8460J</term><term>8115P</term><term>8115C</term><term>6855N</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The development of low cost industrial processes is one of the key issues to make Cu(In,Ga)Se<sub>2</sub> based solar cells reach grid-parity. Such a process is found by using a two-step technology based on the sequential electrodeposition of a metallic precursor followed by a rapid annealing. Three types of metallic precursors (two-compound systems as copper-indium, copper-gallium and three-compound system as copper-indium- gallium) have been electrodeposited on a molybdenum sputtered soda lime glass and alloyed through a low annealing temperature. Then a selenium film has been evaporated and the stack has been annealed at high temperature in a rapid thermal processing furnace. A one-step heating profile has been used from room temperature to 550 °C in less than 1 min. Samples for which the heating was stopped after different annealing times have been characterized using several techniques: X-ray fluorescence spectrometry for elemental composition, X-ray diffraction and Raman spectroscopy for phase composition, scanning electron microscopy for structural analysis and glow discharge optical emission spectroscopy for diffusion study. Preferential formation reactions of the two-compound based metallic precursors have been studied and compared with the copper-indium- gallium metallic precursor used in a two step process. A gallium free system reacts faster than a gallium-based system and presents well-formed ternary compound after a standard selenization. However, the incorporation of gallium can be improved through a longer annealing time or a higher annealing temperature.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>535</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Formation mechanisms of Cu(In,Ga)Se<sub>2</sub> solar cells prepared from electrodeposited precursors</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>E-MRS 2012 Symposium B</s1></fA09><fA11 i1="01" i2="1"><s1>OLIVA (F.)</s1></fA11><fA11 i1="02" i2="1"><s1>BROUSSILLOU (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>ANNIBALIANO (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>FREDERICH (N.)</s1></fA11><fA11 i1="05" i2="1"><s1>GRAND (P. P.)</s1></fA11><fA11 i1="06" i2="1"><s1>ROUSSY (A.)</s1></fA11><fA11 i1="07" i2="1"><s1>COLLOT (P.)</s1></fA11><fA11 i1="08" i2="1"><s1>BODNAR (S.)</s1></fA11><fA12 i1="01" i2="1"><s1>EDOFF (Marika)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>ROMEO (Alessandro)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SCHEER (Roland)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>SHAFARMAN (William)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>KATAGIRI (Hirono)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Nexcis Photovoltaic Technology, 190 Avenue Célestin Coq</s1><s2>13106 Rousset</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Ecole Nationale Supérieure des Mines, CMP-EMSE, MOC, 880 Avenue de Mimet</s1><s2>13541 Gardanne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>127-132</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000504170550280</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>11 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0229249</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The development of low cost industrial processes is one of the key issues to make Cu(In,Ga)Se<sub>2</sub> based solar cells reach grid-parity. Such a process is found by using a two-step technology based on the sequential electrodeposition of a metallic precursor followed by a rapid annealing. Three types of metallic precursors (two-compound systems as copper-indium, copper-gallium and three-compound system as copper-indium- gallium) have been electrodeposited on a molybdenum sputtered soda lime glass and alloyed through a low annealing temperature. Then a selenium film has been evaporated and the stack has been annealed at high temperature in a rapid thermal processing furnace. A one-step heating profile has been used from room temperature to 550 °C in less than 1 min. Samples for which the heating was stopped after different annealing times have been characterized using several techniques: X-ray fluorescence spectrometry for elemental composition, X-ray diffraction and Raman spectroscopy for phase composition, scanning electron microscopy for structural analysis and glow discharge optical emission spectroscopy for diffusion study. Preferential formation reactions of the two-compound based metallic precursors have been studied and compared with the copper-indium- gallium metallic precursor used in a two step process. A gallium free system reacts faster than a gallium-based system and presents well-formed ternary compound after a standard selenization. However, the incorporation of gallium can be improved through a longer annealing time or a higher annealing temperature.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15P</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H55N</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Mécanisme formation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Formation mechanism</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Mecanismo formacion</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Solar cell</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Célula solar</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Revêtement électrodéposé</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Electrodeposited coatings</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Dépôt 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l="SPA"><s0>Galio compuesto</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Dépôt pulvérisation</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Sputter deposition</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Température recuit</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Annealing temperature</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Temperatura recocido</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Sélénium</s0><s2>NC</s2><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Selenium</s0><s2>NC</s2><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Selenio</s0><s2>NC</s2><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Couche mince</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Thin film</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Capa fina</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Traitement thermique rapide</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Rapid thermal processing</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Traitement thermique</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Heat treatment</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Tratamiento térmico</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Cobre</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Gallium</s0><s2>NC</s2><s2>FX</s2><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Gallium</s0><s2>NC</s2><s2>FX</s2><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Galio</s0><s2>NC</s2><s2>FX</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Verre sodocalcique</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Soda-lime glasses</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Séléniure de gallium</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Fluorescence RX</s0><s5>29</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>X ray fluorescence</s0><s5>29</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Fluorescencia RX</s0><s5>29</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Spectrométrie RX</s0><s5>30</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>X ray spectrometry</s0><s5>30</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Espectrometría RX</s0><s5>30</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Diffraction RX</s0><s5>31</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>X ray diffraction</s0><s5>31</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Difracción RX</s0><s5>31</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Spectrométrie Raman</s0><s5>32</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Raman spectrometry</s0><s5>32</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Espectrometría Raman</s0><s5>32</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Composition phase</s0><s5>33</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Phase composition</s0><s5>33</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Composición fase</s0><s5>33</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Microscopie électronique balayage</s0><s5>34</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Scanning electron microscopy</s0><s5>34</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Microscopía electrónica barrido</s0><s5>34</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Analyse structurale</s0><s5>35</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Structural analysis</s0><s5>35</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Análisis estructural</s0><s5>35</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Décharge luminescente</s0><s5>36</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Glow discharge</s0><s5>36</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Descarga luminiscente</s0><s5>36</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Diffusion(transport)</s0><s5>37</s5></fC03><fC03 i1="28" i2="3" l="ENG"><s0>Diffusion</s0><s5>37</s5></fC03><fC03 i1="29" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>38</s5></fC03><fC03 i1="29" i2="X" l="ENG"><s0>Ternary compound</s0><s5>38</s5></fC03><fC03 i1="29" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>38</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>Chalcopyrite</s0><s5>39</s5></fC03><fC03 i1="30" i2="X" l="ENG"><s0>Chalcopyrite</s0><s5>39</s5></fC03><fC03 i1="30" i2="X" l="SPA"><s0>Calcopirita</s0><s5>39</s5></fC03><fC03 i1="31" i2="X" l="FRE"><s0>Cuivre Indium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>40</s5></fC03><fC03 i1="31" i2="X" l="ENG"><s0>Copper Indium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>40</s5></fC03><fC03 i1="31" i2="X" l="SPA"><s0>Cobre Indio Seleniuro Mixto</s0><s2>NC</s2><s2>NA</s2><s5>40</s5></fC03><fC03 i1="32" i2="X" l="FRE"><s0>In</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="33" i2="X" l="FRE"><s0>Substrat Molybdène</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="34" i2="X" l="FRE"><s0>CuGaSe2</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="35" i2="X" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="36" i2="X" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="37" i2="X" l="FRE"><s0>8115P</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="38" i2="X" l="FRE"><s0>8115C</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="39" i2="X" l="FRE"><s0>6855N</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>210</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting 2012. Symposium B "Thin Film Chalcogenide Photovoltaic Materials"</s1><s3>Strasbourg FRA</s3><s4>2012-05-14</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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